叶奔,蒋保涛,张蓓,等.电流辅助硅钢成形中微观组织变化对变形抗力影响的研究[J].精密成形工程,2025,17(1):144-152.
YE Ben,JIANG Baotao,ZHANG Bei,et al.Effect of Microstructure Changes on Deformation Resistance of Silicon Steel in Electrically Assisted Forming[J].Journal of Netshape Forming Engineering,2025,17(1):144-152. |
| 电流辅助硅钢成形中微观组织变化对变形抗力影响的研究 |
| Effect of Microstructure Changes on Deformation Resistance of Silicon Steel in Electrically Assisted Forming |
| 投稿时间：2024-05-30 |
| DOI：10.3969/j.issn.1674-6457.2025.01.017 |
| 中文关键词: 硅钢 电流辅助成形 变形抗力 晶界曲率 缺陷密度 |
| 英文关键词: silicon steel electrically assisted forming deformation resistance grain boundary curvature defect density |
| 基金项目:国家自然科学基金(U20A20279);武汉软件工程职业学院(武汉开放大学)科研启动经费(KYQDJF2024001) |
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| 中文摘要: |
| 目的 探究电流辅助硅钢成形中微观组织变化对硅钢变形抗力的影响。方法 设计了不同变形条件下的电流辅助拉伸实验及静态电流对比实验，然后对样品进行电子背散射衍射(EBSD)测试，分析并研究电流辅助拉伸成形对Fe-0.5%(质量分数)Si无取向硅钢晶粒特征、晶界特征及缺陷密度的影响。结果 在电流辅助硅钢成形中，硅钢的变形抗力显著下降。在电流作用下，晶粒尺寸小幅增加;晶粒轴比、晶界曲率、三叉结曲率等参数明显增大，晶粒轴比最多增大11%，晶界曲率最多增大71%，三叉结曲率最多增大43%;几何必需位错密度及微观缺陷密度显著减小，平均缺陷密度降低幅度最大达94%。结论 在电流辅助成形中，微观组织的变化使硅钢变形抗力降低:晶粒尺寸和晶粒轴比的增大使拉伸方向晶界间距增大;晶界(三叉结)曲率的增大使晶界(三叉结)迁移能力及越过微观障碍的能力增强，且迁移速率增大;微观缺陷密度的降低使试样的系统自由能降低，使硅钢塑性变形趋势增强。 |
| 英文摘要: |
| The work aims to investigate the effect of microstructure changes on the deformation resistance of silicon steel in electrically assisted forming. Electrically assisted tensile experiment and static current comparison experiment were designed under different deformation conditions. The specimens were measured with electron backscattering diffraction (EBSD). The effects of electrically assisted tensile forming (EAF) on grain feature, grain boundary feature and micro-defects of a Fe-0.5wt.%Si steel were investigated. The experimental results showed that the deformation resistance of silicon steel decreased significantly in EAF. Under the action of current, the grain size increased slightly. The parameters such as grain axis ratio, grain boundary curvature, and triple junction curvature significantly increased under the action of electric current, with a maximum increase of 11% in grain axis ratio, 71% in grain boundary curvature, and 43% in triple junction curvature. Under the action of electric current, the geometrically necessary dislocation density and microscopic defect density decreased significantly, with an average reduction of up to 94%. It is concluded that the deformation resistance of silicon steel is reduced by the changes of microstructures. The grain boundary spacing increases with the increase of grain size and grain axial ratio. With the increase of grain boundary curvature, the grain boundary migration ability and the ability to cross the microscopic obstacles are enhanced, and the migration rate of grain boundary increases. With the decrease of micro-defect density, the system free energy of the sample decreases and the plastic deformation tendency of the silicon steel increases. |
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